Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 2009.07a
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- Pages.1256_1257
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- 2009
Optical properties of nitrogen doped ZnO thin films grown by dielectric barrier discharge plasma-assisted pulsed laser deposition
Dielectric barrier discharge 플라즈마 펄스 레이져 증착법을 통해 성장한 nitrogen 도핑 된 산화아연 박막의 광학적 특성
- Lee, Deuk-Hee (Korea Institute of Science and Technology (KIST)) ;
- Kim, Sang-Sig (Korea University) ;
- Lee, Sang-Yeol (Korea Institute of Science and Technology (KIST))
- Published : 2009.07.14
Abstract
We have grown, for the first time to our knowledge, N-doped ZnO thin films on sapphire substrate by employing novel dielectric barrier discharge in pulsed laser deposition (DBD-PLD). DBD guarantees an effective way for massive in-situ generation of N-plasma under the conventional PLD process condition. Low-temperature photoluminescence spectra of the N-doped ZnO film provided near band-edge emission after thermal annealing process. The emission peak was resolved by Gaussian fitting to find a dominant acceptor-bound exciton peak (
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