Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Analysis of $f_T$ and $f_{max}$ Dependence on Unit Finger Width for RF MOSFETs

RF MOSFET의 단위 Finger 폭에 대한 $f_T$ 및 $f_{max}$ 종속성 분석

  • Cha, Ji-Yong (Department of Electronic Engineering, Hankuk University of Foreign Studies) ;
  • Cha, Jun-Young (Department of Electronic Engineering, Hankuk University of Foreign Studies) ;
  • Jung, Dae-Hyoun (Department of Electronic Engineering, Hankuk University of Foreign Studies) ;
  • Lee, Seong-Hearn (Department of Electronic Engineering, Hankuk University of Foreign Studies)
  • 차지용 (한국외국어대학교 전자정보공학과) ;
  • 차준영 (한국외국어대학교 전자정보공학과) ;
  • 정대현 (한국외국어대학교 전자정보공학과) ;
  • 이성현 (한국외국어대학교 전자정보공학과)
  • Published : 2008.06.18
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Abstract

The dependence of $f_T$ and $f_{max}$ on the unit finger width is measured and analyzed for $0.13{\mu}m$ MOSFETs. The increase of $f_T$ at narrow width is attributed by the parasitic gate-bulk capacitance, and the decrease of $f_T$ at wide width is generated by the reduction of increasing rate of $g_{mo}$. The increase of $f_{max}$ at narrow width is originated from the abrupt reduction of gate resistance due to the non-quasi-static effect. These analysis results will be valuable information for layout optimization to improve $f_T$ and $f_{max}$.

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