Electrical Characteristics of Hall and Magnetoresistive Effect Magnetic Field Sensors Fabricated using Ultra-High Mobility 2DEG-InAsSb/InAlSb Heterostructures

  • Takamura, T. (Department of Electrical and Electronic Engineering, Tokyo Institute of Technology) ;
  • Bando, M. (Department of Electrical and Electronic Engineering, Tokyo Institute of Technology) ;
  • Ohashi, T. (Department of Electrical and Electronic Engineering, Tokyo Institute of Technology) ;
  • Park, S.Y. (Graduate School of Bioscience and Biotechnology, Tokyo Institute of Technology) ;
  • Dede, M. (Department of Physics, Bilkent University) ;
  • Akram, R. (Department of Physics, Bilkent University) ;
  • Oral, A. (Faculty of Engineering and Natural Sciences, Sabanci University) ;
  • Handa, H. (Graduate School of Bioscience and Biotechnology, Tokyo Institute of Technology) ;
  • Shibasaki, I. (Asahikasei Corporation) ;
  • Sandhu, A. (Graduate School of Bioscience and Biotechnology, Tokyo Institute of Technology)
  • Published : 2008.12.10