Photoluminescence characteristics of Si nano-dots in the SiN$_x$ film fabricated at a low temperature ($\leq$200 $^{\circ}C$)

• Lee, Kyoung-Min (Department of Nano Science and Technology, University of Seoul) ;
• Kim, Tae-Hwan (Department of Nano Science and Technology, University of Seoul) ;
• Lee, Kyung-Su (Department of Nano Science and Technology, University of Seoul) ;
• Won, Sung-Hwan (Department of Nano Science and Technology, University of Seoul) ;
• Sok, Jung-Hyun (Department of Nano Science and Technology, University of Seoul) ;
• Park, Kyoung-Wan (Department of Nano Science and Technology, University of Seoul) ;
• Hong, Wan-Shick (Department of Nano Science and Technology, University of Seoul)

• Published : 2008.02.14

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