Properties of AZO thin flim for solar cells with various input current prepared by FTS method

FTS 법으로 제작한 태양전지용 AZO 박막의 투입전류에 따른 특성

  • Jung, Yu-Sup (Department of Electric Engineering, Kyungwon Univ.) ;
  • Kim, Sang-Mo (Department of Electric Engineering, Kyungwon Univ.) ;
  • Choi, Myung-Kyu (Department of Electric Engineering, Kyungwon Univ.) ;
  • Kim, Kyung-Hwan (Department of Electric Engineering, Kyungwon Univ.)
  • 정유섭 (경원대학교 전기공학과) ;
  • 김상모 (경원대학교 전기공학과) ;
  • 최명규 (경원대학교 전기공학과) ;
  • 김경환 (경원대학교 전기공학과)
  • Published : 2008.06.19

Abstract

The properties of Al doped ZnO (AZO) thin flim for solar cells with various input currents were studied in this paper. Using facing target sputtering with 2wt.% AZO targets, TCO films were deposited on glass(corning 2948) substrate at room temperature. AZO thin films were deposited by 0.2A, 0.4A, 0.6A and 0.8A at the thickness of 300nm. Electrical, optical and structural of thin films investigated by a Hall effect measurement (Ecopia), an UV-VIS spectrometer(HP) and a X-ray diffractometer (Rigaku). As a results, all thin films showed transmittance about 80%, respectively and resistivity was $7.67\times10^{-4}\Omega$-cm at 0.6A.

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