한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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- Pages.307-308
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- 2008
LSMCD 장비를 이용 Boron 도핑 ZnO 박막제조 및 특성평가
New Transparent Conducting B-doped ZnO Films by Liquid Source Misted Chemical Deposition Method
- Kim, Gil-Ho (KAIST) ;
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Woo, Seong-Ihl
(KAIST) ;
- Bang, Jung-Sik (LG Chem, Ltd.)
- 발행 : 2008.06.19
초록
Zinc oxide is a direct band gap wurtzite-type semiconductor with band gap energy of 3.37eV at room temperature. the n-type doped ZnO oxides, B doped ZnO (BZO) is widely studied in TCOs materials as it shows good electrical, optical, and luminescent properties. we focused on the fabrication of B doped ZnO films with glass substrate using the LSMCD at low temperature. And Novel boron-doped ZnO thin films were deposited and characterized from the structural, optical, electrical point of view. The structure, morphology, and optical properties of the films were studied as a function of by employing the XRD, SEM, Hall system and micro Raman system.