A Study on the Electrical Properties of Semiconductive Materials with Copper Tape Shield Structure in Power Cable

전력케이블에서 동테이프 차폐 구조에 따른 반도전성 재료의 전기적 특성 연구

  • 양종석 ((주)디와이엠 기술연구소) ;
  • 류찬 ((주)디와이엠 기술연구소) ;
  • 전근배 ((주)디와이엠 기술연구소) ;
  • 성백룡 ((주)디와이엠 기술연구소)
  • Published : 2008.06.19

Abstract

In this study, we have investigated electrical properties of semiconductive materials for power cable caused by copper tape shield structure. Volume resistivity of specimens was measured by volume resistivity meter after 10 minutes in the pre-heated oven of both 23 [$^{\circ}C$] and 90 [$^{\circ}C$]. From this experimental results, the volume resistivity had different properties because of PTC/NTC tendency at between 23 [$^{\circ}C$] and 90 [$^{\circ}C$].

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