한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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- Pages.208-209
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- 2008
Al 이온 주입된 p-type 4H-SiC에 형성된 Ni/Ti/Al ohmic contact의 특성
Characteristics of Ni/Ti/Al ohmic contact on Al-implanted 4H-SiC
- Joo, Sung-Jae (Korea Electrotechnology Research Institute) ;
- Song, Jae-Yeol (Dong-Eui Univ.) ;
- Kang, In-Ho (Korea Electrotechnology Research Institute) ;
- Bahng, Wook (Korea Electrotechnology Research Institute) ;
- Kim, Sang-Cheol (Korea Electrotechnology Research Institute) ;
- Kim, Nam-Kyun (Korea Electrotechnology Research Institute)
- 발행 : 2008.06.19
초록
Ni/Ti/Al multilayer system was tested for low-resistance ohmic contact formation to Al-implanted p-type 4H-SiC. Compared with conventional process using Ni, Ni/Ti/Al contact shows perfect ohmic behavior, and possesses much lower contact resistance of about