Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2008.06a
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- Pages.208-209
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- 2008
Characteristics of Ni/Ti/Al ohmic contact on Al-implanted 4H-SiC
Al 이온 주입된 p-type 4H-SiC에 형성된 Ni/Ti/Al ohmic contact의 특성
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Joo, Sung-Jae
(Korea Electrotechnology Research Institute) ;
- Song, Jae-Yeol (Dong-Eui Univ.) ;
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Kang, In-Ho
(Korea Electrotechnology Research Institute) ;
- Bahng, Wook (Korea Electrotechnology Research Institute) ;
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Kim, Sang-Cheol
(Korea Electrotechnology Research Institute) ;
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Kim, Nam-Kyun
(Korea Electrotechnology Research Institute)
- Published : 2008.06.19
Abstract
Ni/Ti/Al multilayer system was tested for low-resistance ohmic contact formation to Al-implanted p-type 4H-SiC. Compared with conventional process using Ni, Ni/Ti/Al contact shows perfect ohmic behavior, and possesses much lower contact resistance of about