Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2008.06a
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- Pages.189-190
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- 2008
Study of Nonvolatile Memory Device with $SiO_2/Si_3N_4$ stacked tunneling oxide
터널링 $SiO_2/Si_3N_4$ 절연막의 적층구조에 따른 비휘발성 메모리 소자의 특성 고찰
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Cho, Won-Ju
(Kwangwoon Univ.) ;
- Jung, Jong-Wan (Sejong Univ.)
- Published : 2008.06.19
Abstract
The electrical characteristics of band-gap engineered tunneling barriers consisting of thin
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