Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2008.06a
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- Pages.169-169
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- 2008
The surface kinetic properties between $BCl_3/Cl_2$ /Ar plasma and $Al_2O_3$ thin film
- Yang, Xue (School of Electrical and Electronics Engineering, Chung-Ang University) ;
- Kim, Dong-Pyo (School of Electrical and Electronics Engineering, Chung-Ang University) ;
- Um, Doo-Seung (School of Electrical and Electronics Engineering, Chung-Ang University) ;
- Kim, Chang-Il (School of Electrical and Electronics Engineering, Chung-Ang University)
- Published : 2008.06.19
Abstract
To keep pace with scaling trends of CMOS technologies, high-k metal oxides are to be introduced. Due to their high permittivity, high-k materials can achieve the required capacitance with stacks of higher physical thickness to reduce the leakage current through the scaled gate oxide, which make it become much more promising materials to instead of