한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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- Pages.168-168
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- 2008
$BCl_3$ /Ar 플라즈마에서 $Cl_2$ 첨가에 따른 TiN 박막의 식각 특성
Etch characteristics of TiN thin film adding $Cl_2$ in $BCl_3$ /Ar Plasma
- Um, Doo-Seung (Chung-Ang Univ.) ;
- Kang, Chan-Min (Chung-Ang Univ.) ;
- Yang, Xue (Chung-Ang Univ.) ;
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Kim, Dong-Pyo
(Chung-Ang Univ.) ;
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Kim, Chang-Il
(Chung-Ang Univ.)
- 발행 : 2008.06.19
초록
Dimension of a transistor has rapidly shrunk to increase the speed of device and to reduce the power consumption. However, it is accompanied with several problems like direct tunneling through the gate dioxide layer and low conductivity characteristic of poly-Si gate in nano-region. To cover these faults, study of new materials is urgently needed. Recently, high dielectric materials like