한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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- Pages.143-143
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- 2008
Formation Rate of DNA Nanowires According to the APTES Concentration
- Kim, Taek-Woon (School of Information and Communication Engineering, Sungkyunkwan University) ;
- Kim, Nam-Hoon (School of Information and Communication Engineering, Sungkyunkwan University) ;
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Roh, Yong-Han
(School of Information and Communication Engineering, Sungkyunkwan University)
- 발행 : 2008.06.19
초록
Nanowires are promising options for building nanoscale electronic structures coming from high conductivity of nanowires. In particular, Deoxyribonucleic acid (DNA), which is structurally nanowire, can obtain highly ordered electronic components for nanocircuitry and/or nanodevices because of its very flexible length controllability, nanometer-size diameter, about 2 nm, and self-assembling properties. In this work, we used the method to form DNA-Nanowires (NWs) by using chemical treatment on Silicon (Si) surface, and Aminopropyl-triethoxysilane (APTES) was used as inducer of DNA sequence to modify the characteristics of Si surface. Moreover, we performed tilting technique to align DNA by the direction of flow of DNA solution. We investigated the assembly process between DNA molecules and APTES - coated Si surface according to the APTES concentration, from
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