Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2008.06a
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- Pages.129-130
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- 2008
Schottky barrier Thin-Film-Transistors crystallized by Excimer laser annealing and solid phase crystallization method
ELA 결정화와 SPC 결정화를 이용한 쇼트키 장벽 다결정 실리콘 박막 트랜지스터
- Shin, Jin-Wook (Kwangwoon Univ.) ;
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Choi, Chel-Jong
(Chonbuk Univ.) ;
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Cho, Won-Ju
(Kwangwoon Univ.)
- Published : 2008.06.19
Abstract
Polycrystalline silicon (poly-Si) Schottky barrier thin film transistors (SB-TFT) are fabricated by erbium silicided source/drain for n-type SB-TFT. High quality poly-Si film were obtained by crystallizing the amorphous Si film with excimer laser annealing (ELA) or solid phase crystallization (SPC) method. The fabricated poly-Si SB-TFTs have a large on/off current ratio with a low leakage current. Moreover, the electrical characteristics of poly-Si SB TFTs are significantly improved by the additional forming gas annealing in 2 %
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