한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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- Pages.18-19
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- 2008
M/NEMS용 in-situ 도핑된 다결정 3C-SiC 박막 성장
Epitaxial growth of in-situ doped polycrystalline 3C-SiC for M/NEMS application
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Kim, Kang-San
(School of Electrical Eng., University of Ulsan) ;
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Chung, Gwiy-Sang
(School of Electrical Eng., University of Ulsan)
- 발행 : 2008.06.19
초록
Polycrystalline(poly) 3C-SiC film is a promising structural material for M/NEMS used in harsh environments, bio and fields. In order to realize poly 3C-SiC based M/NEMS devices, the electrical properties of poly 3C-SiC film have to be optimized. The n-type poly 3C-SiC thin film is deposited by APCVD using HMDS