한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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- Pages.275-275
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- 2008
고온 가스센서용 Pd-다결정 3C-SiC 쇼트키 다이오드의 특성
Characteristics of Pd/polycrystalline 3C-SiC Schottky diodes for high temperature gas sensors
- Ahn, Jeong-Hak (School of Electrical Eng., University of Ulsan) ;
- Chung, Gwiy-Sang (School of Electrical Eng., University of Ulsan)
- 발행 : 2008.11.06
초록
This paper describe the fabrication of a Pd/polycrystalline 3C-SiC schottky diode and its characteristics, in which the polycrystalline 3C-SiC layer and Pd Schottky contact were deposited by using APCVD and sputter, respectively. Crystalline quality, uniformity, and preferred orientations of the Pd thin film were evaluated by SEM and XRD, respectively. Pd/poly 3C-SiC Schottky diodes were fabricated and characterized by I-V and C-V measurements. Its electric current density Js and barrier height voltage were measured as