한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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- Pages.270-271
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- 2008
RF 마그네트론 스퍼터를 이용한 ATO 박막의 열처리 효과
The effects of annealing of the ATO films prepared by RF magnetron sputtering
- 박세용 (성균관대학교 정보통신공학부) ;
- 이성욱 (성균관대학교 정보통신공학부) ;
- 박미주 (성균관대학교 정보통신공학부) ;
- 김영렬 (성균관대학교 정보통신공학부) ;
- 홍병유 (성균관대학교 정보통신공학부)
- Park, Sei-Yong (School of Information and Communication Engineering, Sungkyunkwan University) ;
- Lee, Sung-Uk (School of Information and Communication Engineering, Sungkyunkwan University) ;
- Park, Mi-Ju (School of Information and Communication Engineering, Sungkyunkwan University) ;
- Kim, Young-Ryeol (School of Information and Communication Engineering, Sungkyunkwan University) ;
- Hong, Byung-You (School of Information and Communication Engineering, Sungkyunkwan University)
- 발행 : 2008.11.06
초록
Antimony (6 wt%) doped tin oxide (ATO) films to improve conductivity were deposited on 7059 coming glass by RF magnetron sputtering method for application to transparent electrodes. The ATO film was deposited at a working pressure of 5 mTorr and RF power of 175 W. We investigated the effects of the post-annealing temperature on structural, electrical and optical properties of the ATO films. The films were annealed at temperatures ranging from