한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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- Pages.113-114
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- 2008
Characteristic in Mg-doped p-type GaN changing activation temperature in $N_2$ gas ambient
- Lee, Sung-Ho (University of Seoul, Korea Electronics Technology Institude) ;
- Kim, Chul-Joo (University of Seoul, Korea Electronics Technology Institude) ;
- Seo, Yong-Gon (University of Seoul, Korea Electronics Technology Institude) ;
- Seo, Mun-Suek (University of Seoul, Korea Electronics Technology Institude) ;
- Hwang, Sung-Min (University of Seoul, Korea Electronics Technology Institude)
- 발행 : 2008.11.06
초록
Conventional furnace annealing (CFA) for activating Mg-doped p-type GaN films had been performed in pure
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