기판 바이어스 전압을 이용한 태양전지용 GZO 박막의 전기적, 광학적 특성

Electrical and Optical Properties of GZO Thin Films Using Substrate Bias Voltage for Solar Cell

  • 권순일 (충주대학교 전자공학과) ;
  • 박승범 (충주대학교 전자공학과) ;
  • 이석진 (충주대학교 전자공학과) ;
  • 정태환 (충주대학교 전자공학과) ;
  • 양계준 (충주대학교 전자공학과) ;
  • 박재환 (충주대학교 전자공학과) ;
  • 최원석 (한밭대학교 전기공학과) ;
  • 임동건 (충주대학교 전자공학과)
  • Kwon, Soon-Il (Department of Electronic Engineering, Chungju national University) ;
  • Park, Seung-Bum (Department of Electronic Engineering, Chungju national University) ;
  • Lee, Seok-Jin (Department of Electronic Engineering, Chungju national University) ;
  • Jung, Tae-Hwan (Department of Electronic Engineering, Chungju national University) ;
  • Yang, Kea-Jun (Department of Electronic Engineering, Chungju national University) ;
  • Park, Jea-Hwan (Department of Electronic Engineering, Chungju national University) ;
  • Choi, Won-Seok (Hanbat national University) ;
  • Lim, Dong-Gun (Department of Electronic Engineering, Chungju national University)
  • 발행 : 2008.11.06

초록

In this paper we report upon an investigation into the effect of DC bias voltage on the electrical and optical properties of Gallium doped zinc oxide (GZO) film. GZO films were deposited on glass substrate without substrate temperature by RF magnetron sputtering from a ZnO target mixed with 5 wt% $Ga_2O_3$. we investigated sample properties of bias voltage change in 0 to -60 V. We were able to achieve as low as $5.89\times10^{-4}$ ${\Omega}cm$ and transmittance over 87%. without substrate temperature.

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