한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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- Pages.98-99
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- 2008
Hot Wall Epitaxy (HWE)법에 의해 성장된 $AgGaSe_2$ 에피레이어의 점결함 연구
Point defect for $AgGaSe_2$ epilayers grown by hot wall epitaxy
- Hong, Myung-Seok (Department of Michenical Engineering, Chosun University) ;
- Hong, Kwang-Joon (Department of Physics, Chosun University)
- 발행 : 2008.11.06
초록
To obtain the single crystal thin films,