Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2008.11a
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- Pages.98-99
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- 2008
Point defect for $AgGaSe_2$ epilayers grown by hot wall epitaxy
Hot Wall Epitaxy (HWE)법에 의해 성장된 $AgGaSe_2$ 에피레이어의 점결함 연구
- Hong, Myung-Seok (Department of Michenical Engineering, Chosun University) ;
- Hong, Kwang-Joon (Department of Physics, Chosun University)
- Published : 2008.11.06
Abstract
To obtain the single crystal thin films,
Keywords