한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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- Pages.86-87
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- 2008
Programmable Metallization Cell 제작을 위한 Ag-doped Germanium Selenide의 고체전해질 특성
The Solid-electrolyte Characteristics of Ag-doped Germanium Selenide for Manufacturing of Programmable Metallization Cell
- Nam, Ki-Hyun (Kwangwoon Univ.) ;
- Koo, Sang-Mo (Kwangwoon Univ.) ;
- Chung, Hong-Bay (Kwangwoon Univ.)
- 발행 : 2008.11.06
초록
In this study, we studied the nature of thin films formed by photodoping chalcogenide materials with for use in programmable metallization cell devices, a type of ReRAM. We investigated the resistance of Ag-doped chalcogenide thin films varied in the applied voltage bias direction from about 1 M