한국정보디스플레이학회:학술대회논문집
- 2008.10a
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- Pages.1105-1106
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- 2008
Transparent-Oxide-Semiconductor Based Staggered Self-Alignment Thin-Film Transistors
- Yamagishi, Akira (University of Toyama) ;
- Naka, Shigeki (University of Toyama) ;
- Okada, Hiroyuki (University of Toyama)
- Published : 2008.10.13
Abstract
Staggered type self-aligned transparent-oxide-semiconductor transistors with indium-zinc-oxide as a semiconductor have studied. In this device fabrication, successive sputtering of oxide semiconductor and insulator without breaking of vacuum and without exposing in air, humidity and oxygen can be realized because oxide semiconductor is transparent. As a result of fabrication, transistor characteristics with mobility of
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