한국정보디스플레이학회:학술대회논문집
- 2008.10a
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- Pages.264-267
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- 2008
Reverse annealing of boron doped polycrystalline silicon
- Lim, Jung-Yoon (Dept. of Materials Science and Engineering, Hongik Univ.) ;
- Hong, Won-Eui (Dept. of Materials Science and Engineering, Hongik Univ.) ;
- Kim, Deok-Hoi (LTPS Team, AMLCD Business, Samsung Electronics) ;
- Uemoto, Tstomu (LTPS Team, AMLCD Business, Samsung Electronics) ;
- Kim, Chi-Woo (LTPS Team, AMLCD Business, Samsung Electronics) ;
- Ro, Jae-Sang (Dept. of Materials Science and Engineering, Hongik Univ.)
- Published : 2008.10.13
Abstract
Through-doping conditions with higher energies and doses were intentionally chosen to understand reverse annealing behavior. We observed that the implantation condition plays a critical role on dopant activation. We found a certain implantation condition with which the sheet resistance is not changed at all upon activation annealing.