Analysis of 3-Dimensional Current Flow by n-electrode Pattern Shape in GaN-based Vertical LED

수직형구조 GaN계 발광다이오드에서 전극구조 모양에 따른 3차원 전류분포 해석

  • 윤주선 (한양대학교 고속회로연구실) ;
  • 심종인 (한양대학교 고속회로연구실)
  • Published : 2008.02.01

Abstract

The effect of n-electrode patterns on the current distribution in active region is investigated in GaN-based blue vertical light emitting diodes (VLEDs). A 3-dimension circuit model is adopted to analyze the current flow patterns in VLEDs. We had fabricated VLEDs having different n-electrode patterns, measured their current-voltage characteristics, and compared to the numerical simulation. It turns out that the current spreading in VLEDs is strongly dependent on the n-electrode pattern. Some design guidelines for n-electrode patterns to produce uniform current injection are presented.

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