Proceedings of the Optical Society of Korea Conference (한국광학회:학술대회논문집)
- 2008.02a
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- Pages.93-94
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- 2008
Improvement of Current Uniformity by Adjusting Ohmic Resitivity on the Surface in Light Emitting Diodes
발광 다이오드에서 분균일 전극의 Ohmic특성을 이용한 전류분포 균일도 향상
- Published : 2008.02.01
Abstract
In order to suppress the current crowding in light emitting diodes (LEDs) grown on sapphire substrate, the effect of nonuniform contact resistivity between TME layer and p-GaN layer on the LED surface was theoretically investigated. The analysis results showed that current crowding occurring around p-electrode could be considerably improved, which in turn would be helpful to improve the electrostatic discharge (ESD) characteristic.
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