A Design of Dual Band LNA for RFID Using Varactor Diode

Varactor를 이용한 RFID 이증 대역 LNA 설계

  • Choi, Jin-Kyu (School of Electrical and Electronics Engineering Chung-ang University) ;
  • Ko, Jae-Hyeong (School of Electrical and Electronics Engineering Chung-ang University) ;
  • Chang, Se-Wook (School of Electrical and Electronics Engineering Chung-ang University) ;
  • Kim, Hyeong-Seok (School of Electrical and Electronics Engineering Chung-ang University)
  • 최진규 (중앙대학교 공과대학 전자전기공학부) ;
  • 고재형 (중앙대학교 공과대학 전자전기공학부) ;
  • 장세욱 (중앙대학교 공과대학 전자전기공학부) ;
  • 김형석 (중앙대학교 공과대학 전자전기공학부)
  • Published : 2008.05.30

Abstract

In this paper, a dual band LNA (Low Noise Amplifier) with a matching circuit using varactor diode is designed for 912MHz and 2450MHz RFID system. The operating frequency is controlled by the bias voltage applied to the varactor diode. The measured results demonstrate that gain is 13.6dB and 6.8dB at 912MHz and 2450MHz. The measured NF (Noise Figure) is 1.4dB and 3.1dB at 912MHz and 2450MHz, respectively.

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