The Study of Amorphous Ge-Se Thin Film for applying Holographic Diffraction Pattern to Solid Electrolyte

홀로그래픽 회절 패턴을 고체전해질에 적용하기 위한 비정질 Ge-Se 박막의 특성에 관한 연구

In this study, we studied the nature of thin films formed by photodoping chalcogenide materials with for use in programmable metallization cell devices, a type of ReRAM. We investigated the resistance of Ag-doped chalcogenide thin films varied in the applied voltage bias direction from about $1M{\Omega}$ to several hundreds of ${\Omega}$. As a result of these resistance change effects, it was found that these effects agreed with PMC-RAM. The results imply that a Ag-rich phase separates owing to the reaction of Ag with free atoms from the chalcogenide materials.