대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)

대한전기학회 (The Korean Institute of Electrical Engineers)
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$Ge_1Se_1Te_2/As$에 Ag layer를 삽입한 구조의 전기적 특성

Electrical Characteristics of $Ge_1Se_1Te_2/As$ with Inserted Ag Layer

  • 발행 : 2008.07.16
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초록

A detailed investigation and structure of tested samples are clearly presented. As a reference, $Ge_1Se_1Te_2/As$ only sample was also investigated. We used compound of Ge-Se-Te material for phase-change cell. Actually, the performance properties have been improved surprisingly then conventional Ge-Sb-Te. However, crystallization time was as long as ever for amorphization time. We conducted this experiment in order to solve that problem by doping-As with Ag layer.

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