Electrical Properties of $V_{1.9}W_{0.1}O_5$ Thin Films for the uncooled Infrared Detector

비냉각 적외선 감지소자 응용을 위한 $V_{1.9}W_{0.1}O_5$ 박막의 전기적 특성

The $V_{1.8}W_{0.2}O_5$ thin films deposited on $Pt/Ti/SiO_2/Si$ substrates by RF sputtering method exhibited fairly good TCR and dielectric properties. It was found that film crystallinity, dielectric properties, and TCR properties were strongly dependent upon the annealing temperature. The dielectric constants of the $V_{1.8}W_{0.2}O_5$ thin films annealed at 400$^{\circ}C$ were 38.11, with a dielectric loss of 0.134, respectively. Also, the TCR values of the $V_{1.8}W_{0.2}O_5$ thin films annealed at 400$^{\circ}C$ were about -3.15%/K.