SiC-$TiB_2$ 전도성(電導性) 복합체(複合體)의 특성(特性)에 미치는 가압(加壓)의 영향(影響)

Effect of Pressure on Properties of the SiC-$TiB_2$ Electroconductive Ceramic Composites

  • 신용덕 (원광대학교 전기전자 및 정보공학부) ;
  • 서재호 (원광대학교 전기전자 및 정보공학부) ;
  • 주진영 (원광대학교 전기전자 및 정보공학부) ;
  • 고태헌 (원광대학교 전기전자 및 정보공학부) ;
  • 이정훈 (원광대학교 전기전자 및 정보공학부)
  • Shin, Yong-Deok (Electrical Electronic and Information Engineering, Wonkwnag Univ.) ;
  • Seo, Je-Ho (Electrical Electronic and Information Engineering, Wonkwnag Univ.) ;
  • Ju, Jin-Young (Electrical Electronic and Information Engineering, Wonkwnag Univ.) ;
  • Ko, Tae-Hun (Electrical Electronic and Information Engineering, Wonkwnag Univ.) ;
  • Lee, Jung-Hoon (Electrical Electronic and Information Engineering, Wonkwnag Univ.)
  • 발행 : 2008.07.16

초록

The composites were fabricated 61[vol.%] ${\beta}$-SiC and 39[vol.%] $TiB_2$ powders with the liquid forming additives of 12[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid by pressure or pressureless annealing at 1,650[$^{\circ}C$] for 4 hours. Reactions between SiC and transition metal $TiB_2$ were not observed in the microstructure and the phase analysis of the SiC-$TiB_2$ electroconductive ceramic composites. Phase analysis of SiC-$TiB_2$ composites by XRD revealed mostly of ${\alpha}$-SiC(6H), $TiB_2$, and In Situ $YAG(Al_5Y_3O_{12})$. The relative density, the flexural strength and the Young's modulus showed the highest value of 88.32[%], 136.43[MPa] and 52.82[GPa] for pressure annealed SiC-$TiB_2$ composites at room temperature. The electrical resistivity showed the lowest value of 0.0162[${\Omega}{\cdot}cm$] for pressure annealed SiC-$TiB_2$ composite at 25[$^{\circ}C$]. The electrical resistivity of the pressure annealed SiC-$TiB_2$ composite was positive temperature coefficient resistance (PTCR) but the electrical resistivity of the pressureless annealed SiC-$TiB_2$ composites was negative temperature coefficient resistance(NTCR) in the temperature ranges from 25[$^{\circ}C$] to 700[$^{\circ}C$].

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