한국반도체및디스플레이장비학회:학술대회논문집 (Proceedings of the Korean Society Of Semiconductor Equipment Technology)
- 한국반도체및디스플레이장비학회 2007년도 춘계학술대회
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- Pages.104-108
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- 2007
아르곤4P준위 광방출 분석법(OES)을 이용한 플라즈마의 전자온도 및 준안정 밀도 측정
- 발행 : 2007.06.08
초록
This paper reviews a simple model and spectroscopic method for extracting plasma electron temperature and argon metastable number density. The model is based on the availability of experimental relative emission intensities of only four argon lines that originate from 4p argon level. In this method, Maxwell-Boltzman distribution for EEDF is assumed and the calculation relies on the accuracy of the cross section. Therefore OES have to be compared with Langmuir probe to establish their practical validity.
키워드