Proceedings of the Korean Society Of Semiconductor Equipment Technology (한국반도체및디스플레이장비학회:학술대회논문집)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
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아르곤4P준위 광방출 분석법(OES)을 이용한 플라즈마의 전자온도 및 준안정 밀도 측정

  • 이영광 (한양대학교 공과대학 전기공학과) ;
  • 이민형 (한양대학교 공과대학 전기공학과) ;
  • 정진욱 (한양대학교 공과대학 전기공학과)
  • Published : 2007.06.08
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Abstract

This paper reviews a simple model and spectroscopic method for extracting plasma electron temperature and argon metastable number density. The model is based on the availability of experimental relative emission intensities of only four argon lines that originate from 4p argon level. In this method, Maxwell-Boltzman distribution for EEDF is assumed and the calculation relies on the accuracy of the cross section. Therefore OES have to be compared with Langmuir probe to establish their practical validity.

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