한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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- Pages.450-450
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- 2007
유기 트랜지스터를 위한 자가조립단층을 이용한 ITO의 습식 표면개질
Wet Chemical Surface Modification of ITO by Self Assembled Monolayer for Organic Thin Film Transistor
- Jee, Seung-Hyun (Konkuk University) ;
- Kim, Soo-Ho (Konkuk University) ;
- Ko, Jae-Hwan (Konkuk University) ;
- Park, Hoon (Konkuk University) ;
- Lee, Kwang-Hoon (Konkuk University) ;
- Yoon, Young-Soo (Konkuk University)
- 발행 : 2007.06.21
초록
Indium tin oxide (ITO), which is used as an electrode in organic thin film transistors (OTFT), was modified with a self-assembled monolayer (SAM) by wet chemical surface modification. The surface of the ITO was treated by dipping method in a solution of 2-chloroethane phosphonic acid (2-CEPA) at room temperature. The work function in the ITO which was modified with the SAM in the 2-CEPA had 5.43eV. A surface energy and a transmittance were unchanged in an error range. On this study, therefore, possibility of ohmic contact is showed in the interface between the ITO and the organic semiconductors. These results suggest that the treatment of the ITO with the SAM can greatly enhance the performance of the OTFT.
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