한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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- Pages.430-430
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- 2007
배향막 응용을 위한 이온 빔 조사된 ZnO 박막에 관한 연구
Study on ZnO Thin Film Irradiated by Ion Beam as an Alignment Layer
- 강동훈 (연세대학교) ;
- 김병용 (연세대학교) ;
- 김종연 (연세대학교) ;
- 김영환 (연세대학교) ;
- 김종환 (연세대학교) ;
-
한정민
(연세대학교) ;
- 옥철호 (연세대학교) ;
- 이상극 (연세대학교) ;
-
서대식
(연세대학교)
- Kang, Dong-Hoon (Yonsei Univ.) ;
- Kim, Byoung-Yong (Yonsei Univ.) ;
- Kim, Jong-Yeon (Yonsei Univ.) ;
- Kim, Young-Hwan (Yonsei Univ.) ;
- Kim, Jong-Hwan (Yonsei Univ.) ;
-
Han, Jeong-Min
(Yonsei Univ.) ;
- Ok, Chul-Ho (Yonsei Univ.) ;
- Lee, Sang-Keuk (Yonsei Univ.) ;
-
Seo, Dae-Shik
(Yonsei Univ.)
- 발행 : 2007.06.21
초록
In this study, the nematic liquid crystal (NLC) alignment effects treated on the ZnO thin film layers using ion beam irradiation were successfully studied for the first time. The ZnO thin films were deposited on indium-tin-oxide (ITO) coated glass substrates by rf-sputter and The ZnO thin films were deposited at the three kinds of rf power. The used DuoPIGatron type ion beam system, which can be advantageous in a large area with high density plasma generation. The ion beam parameters were as follows: energy of 1800 eV, exposure time of 1 min and ion beam current of