Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2007.06a
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- Pages.392-393
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- 2007
The Study of fabrication and characteristics of Inorganic EL Device with combination of high dielectric constant layer
고유전 유전막을 적용한 Inorganic EL Device 제작 및 특성 연구
- Lee, Gun-Sub (Dept. of Advanced material engineering Korea Polytechnic Univ.) ;
- Ryu, Ji-Ho (Dept. of Advanced material engineering Korea Polytechnic Univ.) ;
- An, Sung-Il (Dept. of Advanced material engineering Korea Polytechnic Univ.) ;
- Lee, Seong-Eui (Dept. of Advanced material engineering Korea Polytechnic Univ.)
- Published : 2007.06.21
Abstract
In this paper, we report the characteristics inorganic EL device with high dielectric constant materials of PMN, PZT. Fabricated EL device shows stable light emission even at 20kHz -400Volt without any break down failure. Brightness voltage curve of EL device is same with typical EL. As increasing applied voltage, the brightness increased linearly. From the results of Frequency and duty ratio variation, over 50% of brightness increment was seen. Luminous efficiency was increased upto 200V range and saturated over 200V by slow increasement of light emission. We got e bright stable emission of 1733 cd/m2 at the condition of Frequency 35 KHz, Duty 10%, 400V.