한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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- Pages.357-358
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- 2007
다결정 3C-SiC 박막의 라만 특성
Raman Characteristics of Polycrystalline 3C-SiC Thin Films
- Jeong, Jun-Ho (Univ. of Ulsan) ;
- Chung, Gwiy-Sang (Univ. of Ulsan)
- 발행 : 2007.06.21
초록
Raman spectra of poly (polycrystalline) 3C-SiC thin films, which were deposited on the oxidized Si substrate by APCVD, have been measured. They were used to study the mechanical characteristics of poly 3C-SiC grown in various temperatures. TO and LO modes of 2.0 m poly 3C-SiC grown at 1180 C occurred at 794.4 and