한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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- Pages.261-262
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- 2007
Ga doped ZnO 박막의 열처리 조건에 따른 전기적 특성에 관한 연구
Effect of annealing on the structural, electrical and optical characteristics of Ga-doped ZnO(GZO)films
- 오수영 (성균관대학교 정보통신공학과) ;
- 김응권 (성균관대학교 정보통신공학과) ;
- 이태용 (성균관대학교 정보통신공학과) ;
- 강현일 (성균관대학교 정보통신공학과) ;
- 김동환 (성균관대학교 정보통신공학과) ;
- 송준태 (성균관대학교 정보통신공학과)
- Oh, Su-Young (School of Information and communication engineering, Sungkyunkwan University) ;
- Kim, Eung-Kwon (School of Information and communication engineering, Sungkyunkwan University) ;
- Lee, Tae-Yong (School of Information and communication engineering, Sungkyunkwan University) ;
- Kang, Hyun-Il (School of Information and communication engineering, Sungkyunkwan University) ;
- Kim, Dong-Hwan (School of Information and communication engineering, Sungkyunkwan University) ;
- Song, Joon-Tae (School of Information and communication engineering, Sungkyunkwan University)
- 발행 : 2007.06.21
초록
In this study we present the effect of annealing temperatures on the structural, electrical and optical characteristics of Ga-doped ZnO(GZO) films. GZO target have been deposited on corning 7059 glass substrates by DC sputtering. GZO films were annealed at temperatures of 400, 500,