The electrical properties of SBT thin films according to various post-annealing of Pt bottom electrode

Pt 하부전극 후열처리 온도에 따른 SBT 박막의 전기적 특성평가

  • Cha, Won-Hyo (School of Materials Science and Engineering, Pusan National University) ;
  • Yoon, Ji-Eon (School of Materials Science and Engineering, Pusan National University) ;
  • Lee, Chul-Su (School of Materials Science and Engineering, Pusan National University) ;
  • Hwang, Dong-Hyun (School of Materials Science and Engineering, Pusan National University) ;
  • Son, Young-Gook (School of Materials Science and Engineering, Pusan National University)
  • Published : 2007.06.21

Abstract

Ferroelectric SBT($SrBi_2Ta_2O_9$) thin films were deposited on Pt/Ti/$SiO_2$/Si substrate using R.F. magnetron sputtering method. The ferroelectric and electric characteristics were investigated with various post-annealing of Pt at $200{\sim}600^{\circ}C$. Compared with SBT thin film which had not post-annealed, the electrical properties and crystallizations of the SBT thin films were relatively improved by the post-annealing of Pt bottom electrode. The crystallization were characterized by X-ray diffraction (XRD). The electrical properties characteristics were observed by HP 4192A and precision LC.

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