한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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- Pages.183-184
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- 2007
플립칩 패키지된 40Gb/s InP HBT 전치증폭기
A Flip Chip Packaged 40 Gb/s InP HBT Transimpedance Amplifier
- Ju, Chul-Won (High Speed SoC Research Department, ETRI) ;
- Lee, Jong-Min (High Speed SoC Research Department, ETRI) ;
- Kim, Seong-Il (High Speed SoC Research Department, ETRI) ;
- Min, Byoung-Gue (High Speed SoC Research Department, ETRI) ;
- Lee, Kyung-Ho (High Speed SoC Research Department, ETRI)
- 발행 : 2007.06.21
초록
A 40 Gb/s transimpedance amplifier IC was designed and fabricated with a InP/InGaAs HBTs technology. In this study, we interconnect 40Gbps trans impedance amplifier IC to a duroid substrate by a flip chip bonding instead of conventional wire bonding for interconnection. For flip chip bonding, we developed fine pitch bump with the