한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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- Pages.162-163
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- 2007
직접 인가된 DC 바이어스에 의한 Si의 건식 식각
Dry etching of Si by direct DC biasing
- 안효준 (전북대학교) ;
- 문성훈 (전북대학교) ;
- 이정수 (전북대학교) ;
- 심규환 (전북대학교) ;
- 양전욱 (전북대학교) ;
- 신희천 ((주)RF-세미) ;
- 이규홍 ((주)RF-세미) ;
- 이진효 ((주)RF-세미)
- Ahn, H.J. (Chonbuk National University) ;
- Moon, S.H. (Chonbuk National University) ;
- Lee, J.S. (Chonbuk National University) ;
- Shim, K.H. (Chonbuk National University) ;
- Yang, J.W. (Chonbuk National University) ;
- Shin, H.C. (RF-Semi Co. Ltd.) ;
- Lee, K.H. (RF-Semi Co. Ltd.) ;
- Lee, J.H. (RF-Semi Co. Ltd.)
- 발행 : 2007.06.21
초록
The dry etching of Si was investigated using direct dc biasing to the Si substrate. The TCP type etching system with a feed-through for applying a dc bias was used in the etching. The applied dc bias and ICP power was varied to examine the effect on the etching at the fixed chamber pressure and