한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

비휘발성 메모리를 위한 실리콘 나노 결정립을 가지는 실리콘 질화막의 전하 유지 특성

Charge retention characteristics of silicon nanocrystals embedded in $SiN_x$ layer for non-volatile memory devices

  • 발행 : 2007.06.21
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초록

We fabricated floating gate non-volatile memory devices with Si nanocrystals embedded in $SiN_x$ layer to achieve higher trap density. The average size of Si nanocrystals embedded in $SiN_x$ layer was ranging from 3 nm to 5 nm. The MOS capacitor and MOSFET devices with Si nanocrystals embedded in $SiN_x$ layer were analyzed the charging effects as a function of Si nanocrystals size.

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