Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2007.06a
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- Pages.101-101
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- 2007
Charge retention characteristics of silicon nanocrystals embedded in $SiN_x$ layer for non-volatile memory devices
비휘발성 메모리를 위한 실리콘 나노 결정립을 가지는 실리콘 질화막의 전하 유지 특성
- Koo, Hyun-Mo (Kwangwoon Univ.) ;
- Huh, Chul (ETRI) ;
- Sung, Gun-Yong (ETRI) ;
- Cho, Won-Ju (Kwangwoon Univ.)
- Published : 2007.06.21
Abstract
We fabricated floating gate non-volatile memory devices with Si nanocrystals embedded in