Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2007.06a
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- Pages.27-28
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- 2007
Thermal Stability Improvement of Ni-silicide Using Ni-Co alloy for Nano-Scale CMOSFET Technology
나노급 CMOSFET을 윈한 Ni-Co 합금을 이용한 Ni-silicide의 열안정성 개선
- Park, Kee-Young (Dept. of Electronics Engineering, Chungnam National University) ;
- Zhang, Ying-Ying (Dept. of Electronics Engineering, Chungnam National University) ;
- Jung, Soon-Yen (Dept. of Electronics Engineering, Chungnam National University) ;
- Li, Shi-Guang (Dept. of Electronics Engineering, Chungnam National University) ;
- Zhun, Zhong (Dept. of Electronics Engineering, Chungnam National University) ;
- Lee, Ga-Won (Dept. of Electronics Engineering, Chungnam National University) ;
- Wang, Jin-Suk (Dept. of Electronics Engineering, Chungnam National University) ;
- Lee, Hi-Deok (Dept. of Electronics Engineering, Chungnam National University)
- 박기영 (충남대학교 공과대학 전자공학과) ;
- 장잉잉 (충남대학교 공과대학 전자공학과) ;
- 정순연 (충남대학교 공과대학 전자공학과) ;
- 이세광 (충남대학교 공과대학 전자공학과) ;
- 종준 (충남대학교 공과대학 전자공학과) ;
- 이가원 (충남대학교 공과대학 전자공학과) ;
- 왕진석 (충남대학교 공과대학 전자공학과) ;
- 이희덕 (충남대학교 공과대학 전자공학과)
- Published : 2007.06.21
Abstract
In this paper, Ni-Co alloy was used for improvement of thermal stability of Ni silicide. The proposed Ni/Ni-Co structure exhibited wide temperature window of rapid thermal process. Sheet resistance as well as cross-sectional profile showed stable characteristics in spite of high temperature annealing up to