한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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- Pages.20-20
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- 2007
ZnO 나노선 - Au 나노입자 하이브리드 메모리 소자
A ZnO nanowire - Au nanoparticle hybrid memory device
- 김상식 (고려대학교) ;
- 염동혁 (고려대학교) ;
- 강정민 (고려대학교) ;
- 윤창준 (고려대학교) ;
- 박병준 (고려대학교) ;
- 김기현 (고려대학교) ;
- 정동영 (고려대학교) ;
- 김미현 (한국기초과학지원연구원) ;
- 고의관 (한국기초과학지원연구원)
- Kim, Sang-Sig (Korea Univ.) ;
- Yeom, Dong-Hyuk (Korea Univ.) ;
- Kang, Jeong-Min (Korea Univ.) ;
- Yoon, Chang-Joon (Korea Univ.) ;
- Park, Byoung-Jun (Korea Univ.) ;
- Keem, Ki-Hyun (Korea Univ.) ;
- Jeong, Dong-Yuong (Korea Univ.) ;
- Kim, Mi-Hyun (Korea Basic Science Institute) ;
- Koh, Eui-Kwan (Korea Basic Science Institute)
- 발행 : 2007.06.21
초록
Nanowire-based field-effect transistors (FETs) decorated with nanoparticles have been greatly paid attention as nonvolatile memory devices of next generation due to their excellent transportation ability of charge carriers in the channel and outstanding capability of charge trapping in the floating gate. In this work, top-gate single ZnO nanowire-based FETs with and without Au nanoparticles were fabricated and their memory effects were characterized. Using thermal evaporation and rapid thermal annealing processes, Au nanoparticles were formed on an