한국정보디스플레이학회:학술대회논문집
- 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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- Pages.926-929
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- 2007
A Study on Wet Etch Behavior of Zinc Oxide Semiconductor in Acid Solutions
- Seo, Bo-Hyun (Department of Materials Science and Engineering, Hankuk Aviation University) ;
- Lee, Sang-Hyuk (Department of Materials Science and Engineering, Hankuk Aviation University) ;
- Jeon, Jea-Hong (School of Electronic, Telecommunications Computer Engineering, Hankuk Aviation University) ;
- Choe, Hee-Hwan (School of Electronic, Telecommunications Computer Engineering, Hankuk Aviation University) ;
- Lee, Kang-Woong (School of Electronic, Telecommunications Computer Engineering, Hankuk Aviation University) ;
- Lee, Yong-Uk (Korea Electronics Technology institute) ;
- Seo, Jong-Hyun (Department of Materials Science and Engineering, Hankuk Aviation University)
- 발행 : 2007.08.27
초록
A significant progress has been made in the characterization of zinc oxide (ZnO) semiconductor as a new semiconductor layer instead of amorphous Si semiconductor used in thin film transistor due to its high electron mobility at low deposition temperature which is quite suitable for flexible display and OLED devices. The wet pattering of ZnO is another important issue with regard to mass production of ZnO thin film transistor device. However, the wet behavior of ZnO thin film in aqueous wet etching solutions conventionally used un TFT industry has not been reported yet, in this work, wet corrosion behavior of RF magnetron sputtered ZnO thin film in various wet solutions such as phosphoric and nitric acid solutions was studied using by electrochemical analysis. The effects of deposition parameters such as RF power and oxygen partial pressure on corrosion rate are also examined.