한국정보디스플레이학회:학술대회논문집

한국정보디스플레이학회 (The Korean Infomation Display Society)
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High performance thin film transistor with ZnO channel layer deposited by DC magnetron sputtering

  • Moon, Yeon-Keon (Department of Materials Science and Engineering, Hanyang University) ;
  • Moon, Dae-Yong (Department of Materials Science and Engineering, Hanyang University) ;
  • Lee, Sang-Ho (Department of Materials Science and Engineering, Hanyang University) ;
  • Park, Ki-Hoon (Department of Materials Science and Engineering, Hanyang University) ;
  • Jeong, Chang-Oh (LCD R&D Center, Samsung Electronics Co., Ltd.) ;
  • Park, Jong-Wan (Department of Materials Science and Engineering, Hanyang University)
  • 발행 : 2007.08.27
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초록

We studied ZnO thin films deposited with DC magnetron sputtering for channel layer of TFTs. After analyzing of the basic physical and chemical properties of ZnO thin films, we fabricated a TFTunit test cell. The field effect mobility of $1.8\;cm^2/Vs$ and threshold voltage of -0.7 V were obtained.

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