한국정보디스플레이학회:학술대회논문집
- 2007.08a
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- Pages.640-643
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- 2007
The effect of plasma damage on electrical properties of amorphous GaInZnO film
- Kim, Min-Kyu (Display Laboratory, Corporate R&D Center, Samsung SDI) ;
- Park, Jin-Seong (Display Laboratory, Corporate R&D Center, Samsung SDI) ;
- Jeong, Jae-Kyeong (Display Laboratory, Corporate R&D Center, Samsung SDI) ;
- Jeong, Jong-Han (Display Laboratory, Corporate R&D Center, Samsung SDI) ;
- Ahn, Tae-Kyung (Display Laboratory, Corporate R&D Center, Samsung SDI) ;
- Yang, Hui-Won (Display Laboratory, Corporate R&D Center, Samsung SDI) ;
- Lee, Hun-Jung (Display Laboratory, Corporate R&D Center, Samsung SDI) ;
- Chung, Hyun-Joong (Display Laboratory, Corporate R&D Center, Samsung SDI) ;
- Mo, Yeon-Gon (Display Laboratory, Corporate R&D Center, Samsung SDI) ;
- Kim, Hye-Dong (Display Laboratory, Corporate R&D Center, Samsung SDI)
- Published : 2007.08.27
Abstract
The effect of plasma damage was investigated on amorphous gallium-indium-zinc oxide (a-GIZO) films and transistors. Ion-bombardment by plasma process affects to turn semiconductor to conductor materials and plasma radiation may degrade to transistor electrical properties. All damages are easily recovered with a