한국정보디스플레이학회:학술대회논문집

The Korean Infomation Display Society (한국정보디스플레이학회)
권호 표지

Effect of Surface-Modified Poly (4-vinyl phenol) Gate Dielectric on Printed Thin Film Transistor

  • Sung, Chao-Feng (Display technology center, Industrial Technology Research Institute, Chutung/Hsinchu 310) ;
  • Tsai, Hsuan-Ming (Display technology center, Industrial Technology Research Institute, Chutung/Hsinchu 310) ;
  • Lee, Yuh-Zheng (Display technology center, Industrial Technology Research Institute, Chutung/Hsinchu 310) ;
  • Cheng, Kevin (Display technology center, Industrial Technology Research Institute, Chutung/Hsinchu 310)
  • Published : 2007.08.27
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Abstract

Surface modification of the gate dielectric has a strong influence on the performance of printed transistors. The surface modification occurs between the gate dielectric and semiconductor. The printed transistor with evaporated vanadium pentoxide ($V_2O_5$) modification exhibits a mobility of $0.2cm^2\;V^{-1}\;s{-1}$ and a subthreshold slope of 1.47 V/decade.

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