한국정보디스플레이학회:학술대회논문집
- 2007.08b
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- Pages.1443-1446
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- 2007
Change of Internal Resistance of OLED Devices during Operation
- Lee, Soon-Seok (Dept. of physics and advanced materials science, Sunmoon Univ.) ;
- Hwang, Hak-Eun (R&D group, NeoView KOLON Co., LTD.) ;
- Lim, Sung-Kyoo (Dept. of Electronics Engineering, Dankook Univ.)
- Published : 2007.08.27
Abstract
The luminance and operating voltage were measured during OLED operation for the purpose of analyzing the efficiency and change of internal resistance. The half lifetime of OLED was affected by degradation of OLED due to heat generated by ambient temperature and self heating. The operating voltage constantly increased due to the increase of internal resistance. The half lifetime of OLED driven by constant current source was found to be longer than that of the OELD driven by constant voltage and the reasons were clearly explained in this paper.